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Improving the Electronic Properties of Au/n-Si Type Schottky Junction Structure With Graphene-PVP Nano-Thin Film by Using the I-V, C-2-V and G/omega-V Characteristics

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dc.contributor.authorCicek, O
dc.date.accessioned2023-04-18T03:05:42Z
dc.date.available2023-04-18T03:05:42Z
dc.date.issued2020.01.01
dc.identifier.doi10.1109/TNANO.2020.2972036
dc.identifier.eissn1941-0085
dc.identifier.endpage178
dc.identifier.issn1536-125X
dc.identifier.issue
dc.identifier.startpage172
dc.identifier.urihttps://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:000526715100002&DestLinkType=FullRecord&DestApp=WOS
dc.identifier.urihttps://hdl.handle.net/20.500.12597/10441
dc.identifier.volume19
dc.identifier.wosWOS:000526715100002
dc.relation.ispartofIEEE TRANSACTIONS ON NANOTECHNOLOGY
dc.titleImproving the Electronic Properties of Au/n-Si Type Schottky Junction Structure With Graphene-PVP Nano-Thin Film by Using the I-V, C-2-V and G/omega-V Characteristics
dc.typeArticle
dspace.entity.typeWos
relation.isPublicationOfWose8853f7c-8af7-4b98-8817-0cfc62583257
relation.isPublicationOfWos.latestForDiscoverye8853f7c-8af7-4b98-8817-0cfc62583257

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