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Improving the Electronic Properties of Au/n-Si Type Schottky Junction Structure With Graphene-PVP Nano-Thin Film by Using the I-V, C-2-V and G/omega-V Characteristics

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2020.01.01

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https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:000526715100002&DestLinkType=FullRecord&DestApp=WOS
 https://hdl.handle.net/20.500.12597/10441

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