Statistics for Improving the Electronic Properties of Au/n-Si Type Schottky Junction Structure With Graphene-PVP Nano-Thin Film by Using the I-V, C-2-V and G/omega-V Characteristics

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Improving the Electronic Properties of Au/n-Si Type Schottky Junction Structure With Graphene-PVP Nano-Thin Film by Using the I-V, C-2-V and G/omega-V Characteristics 0

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