Browsing by Author "Cicek, O"
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Web of Science 21.2 mV/K High-Performance Ni-(50 nm)-Au-(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode(2022.01.01) Cicek, O; Arslan, E; Altindal, S; Badali, Y; Ozbay, EWeb of Science A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures(2020.01.01) Cicek, O; Altindal, S; Azizian-Kalandaragh, YWeb of Science A new approach to determine the capture conditions of bark beetles in pheromone-baited traps(2014.01.01) Ozcan, GE; Cicek, O; Enez, K; Yildiz, MWeb of Science A new design of electronic control unit involving microcontroller to determine important parameters for target species in forest(2018.01.01) Ozcan, GE; Cicek, O; Enez, K; Yildiz, MWeb of Science Comparative investigation on electronic properties of metal-semiconductor structures with variable ZnO thin film thickness for sensor applications(2019.01.01) Cicek, O; Kurnaz, S; Bekar, A; Ozturk, OWeb of Science Comparative Investigation on the Effects of Organic and Inorganic Interlayers in Au/n-GaAs Schottky Diodes(2017.01.01) Tan, SO; Tecimer, H; Cicek, OWeb of Science Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval(2022.01.01) Tan, SO; Cicek, O; Turk, CG; Altindal, SWeb of Science Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities(2016.01.01) Tan, SO; Tecimer, HU; Cicek, O; Tecimer, H; Orak, I; Altindal, SWeb of Science Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions(2016.01.01) Cicek, O; Tecimer, HU; Tan, SO; Tecimer, H; Altindal, S; Uslu, IWeb of Science Evaluation of the counting success of pheromone-baited trap with electronic control unit(2016.01.01) Ozcan, GE; Cicek, O; Enez, K; Yildiz, MWeb of Science Frequency dependent C-V and G/omega-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes(2017.01.01) Tan, SO; Tecimer, HU; Cicek, O; Tecimer, H; Altindal, SWeb of Science Frequency Response of C-V and G/omega-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures(2021.01.01) Akbas, AM; Cicek, O; Altindal, S; Azizian-Kalandaragh, YWeb of Science High Dielectric Performance of Heterojunction Structures Based on Spin-Coated Graphene-PVP Thin Film on Silicon With Gold Contacts for Organic Electronics(2022.01.01) Cicek, O; Koca, G; Altindal, SWeb of Science Identifying of series resistance and interface states on rhenium/n-GaAs structures using C-V-T and G/-V-T characteristics in frequency ranged 50 kHz to 5 MHz(2020.01.01) Cicek, O; Durmus, H; Altindal, SWeb of Science Web of Science IMPROVING PERFORMANCE OF THE INTEGRATED ELECTRONIC CONTROL UNIT ON PHEROMONE BAITED TRAPS AS A NEW APPROACH IN BIOTECHNOLOGICAL CONTROL METHODS(2018.01.01) Cicek, O; Ozcan, GE; Enez, K; Yildiz, MPublication Improving the Electronic Properties of Au/n-Si Type Schottky Junction Structure with Graphene-PVP Nano-Thin Film by Using the I-V, C-2-V and G/ω-V Characteristics(2020-01-01) Cicek O.; Cicek, OThe letter reports the performance assessment of Au/n-Si type Schottky Junction Structure (SJS) with and without the graphene-PVP layer, classified as SJS1 and SJS2 devices. The electronic parameters by using the developed LabVIEW based program were calculated from raw data of I-V, C-V and G/ω-V measurements at room temperature. According to Thermionic Emission (TE) theory, the graphene-PVP layer significantly modified the barrier height than the other structure. Using the Ohm's Law, it is found that the $R_{sh}$ magnitude increases, while the $R_{s}$ magnitude decreases for SJS2, according to SJS1 type device. Alternatively, using Cheung's and the modified Norde functions for the accuracy and reliability of the results, the obtained n, $\phi _{Bo}$, $R_{s}$ values by both equations are in good agreement. Using the C-2-V and G/ω-V characteristics, the magnitudes of the electronic parameters, such as $\phi _{Bo}\,_{{\rm{(C-V)}}}$, $V_{bi}$, $V_{D}$, $N_{D}$, $E_{F}$, $R_{s}$, etc., for the devices were calculated to supply more information. Also, the $C_{i}$ and $C_{ox}$ magnitudes were calculated 1.299 × 10-10 F and 1.192 × 10-10 F at 3 V and then, the interface layer thicknesses were obtained as 2.08 nm and 68.8 nm for SJS1 and SJS2, respectively. It can be concluded that the graphene-PVP layer significantly affects the quality and performance of Au/n-Si type SJS devices.Web of Science Role of Graphene-Doped Organic/Polymer Nanocomposites on the Electronic Properties of Schottky Junction Structures for Photocell Applications(2018.01.01) Cicek, O; Tan, SO; Tecimer, H; Altindal, SWeb of Science Self-powered visible-UV light photodiodes based on ZnO nanorods-silicon heterojunctions with surface modification and structural enhancement(2022.01.01) Cicek, O; Karasueleymanoglu, M; Kurnaz, S; Oztuerk, O; Tasci, AT