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21.2 mV/K High-Performance Ni-(50 nm)-Au-(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode

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2022.01.01

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https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:000928140300009&DestLinkType=FullRecord&DestApp=WOS
 https://hdl.handle.net/20.500.12597/11487

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