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21.2 mV/K High-Performance Ni-(50 nm)-Au-(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode

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dc.contributor.authorCicek, O
dc.contributor.authorArslan, E
dc.contributor.authorAltindal, S
dc.contributor.authorBadali, Y
dc.contributor.authorOzbay, E
dc.date.accessioned2023-04-19T01:05:56Z
dc.date.available2023-04-19T01:05:56Z
dc.date.issued2022.01.01
dc.identifier.doi10.1109/JSEN.2022.3219553
dc.identifier.eissn1558-1748
dc.identifier.endpage23704
dc.identifier.issn1530-437X
dc.identifier.issue24
dc.identifier.startpage23699
dc.identifier.urihttps://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:000928140300009&DestLinkType=FullRecord&DestApp=WOS
dc.identifier.urihttps://hdl.handle.net/20.500.12597/11487
dc.identifier.volume22
dc.identifier.wosWOS:000928140300009
dc.relation.ispartofIEEE SENSORS JOURNAL
dc.title21.2 mV/K High-Performance Ni-(50 nm)-Au-(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode
dc.typeArticle
dspace.entity.typeWos
local.indexed.atWOS
relation.isPublicationOfWosbf689c0c-82f8-4c56-ace7-914edd386af2
relation.isPublicationOfWos.latestForDiscoverybf689c0c-82f8-4c56-ace7-914edd386af2

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