Web of Science:
A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors

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dc.contributor.authorÇiçek, O
dc.contributor.authorBadali, Y
dc.date.accessioned2024-07-08T05:40:41Z
dc.date.available2024-07-08T05:40:41Z
dc.date.issued2024.01.01
dc.identifier.doi10.1109/TDMR.2024.3379745
dc.identifier.eissn1558-2574
dc.identifier.endpage286
dc.identifier.issn1530-4388
dc.identifier.issue2
dc.identifier.startpage275
dc.identifier.urihttps://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:001253145400015&DestLinkType=FullRecord&DestApp=WOS_CPL
dc.identifier.urihttps://hdl.handle.net/20.500.12597/33367
dc.identifier.volume24
dc.identifier.wos001253145400015
dc.relation.ispartofIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
dc.subjectHEMTs
dc.subjectElectric breakdown
dc.subjectLogic gates
dc.subjectPassivation
dc.subjectTransistors
dc.subjectElectric fields
dc.subjectIII-V semiconductor materials
dc.subjectGaN
dc.subjectwide-bandgap
dc.subjectnegative-bias temperature instability
dc.subjectfield-plated structure
dc.subjectpassivation layer
dc.subjectbreakdown voltage enhancement
dc.titleA Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors
dc.typeArticle
dspace.entity.typeWos

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