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A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors

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2024.01.01

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HEMTs, Electric breakdown, Logic gates, Passivation, Transistors, Electric fields, III-V semiconductor materials, GaN, wide-bandgap, negative-bias temperature instability, field-plated structure, passivation layer, breakdown voltage enhancement

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https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:001253145400015&DestLinkType=FullRecord&DestApp=WOS_CPL
 https://hdl.handle.net/20.500.12597/33367

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