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A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures

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dc.contributor.authorCicek, O
dc.contributor.authorAltindal, S
dc.contributor.authorAzizian-Kalandaragh, Y
dc.date.accessioned2023-04-18T14:34:48Z
dc.date.available2023-04-18T14:34:48Z
dc.date.issued2020.01.01
dc.identifier.doi10.1109/JSEN.2020.3009108
dc.identifier.eissn1558-1748
dc.identifier.endpage14089
dc.identifier.issn1530-437X
dc.identifier.issue23
dc.identifier.startpage14081
dc.identifier.urihttps://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace7&SrcAuth=WosAPI&KeyUT=WOS:000589257300025&DestLinkType=FullRecord&DestApp=WOS
dc.identifier.urihttps://hdl.handle.net/20.500.12597/10620
dc.identifier.volume20
dc.identifier.wosWOS:000589257300025
dc.relation.ispartofIEEE SENSORS JOURNAL
dc.titleA Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures
dc.typeArticle
dspace.entity.typeWos
local.indexed.atWOS
relation.isPublicationOfWos140d483e-aa60-470b-92d3-1318f2652bcc
relation.isPublicationOfWos.latestForDiscovery140d483e-aa60-470b-92d3-1318f2652bcc

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