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Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction

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dc.contributor.authorOzturk, MK
dc.contributor.authorHongbo, Y
dc.contributor.authorSarikavak, B
dc.contributor.authorKorcak, S
dc.contributor.authorOzcelik, S
dc.contributor.authorOzbay, E
dc.date.accessioned2023-04-15T21:58:34Z
dc.date.available2023-04-15T21:58:34Z
dc.date.issued2010.01.01
dc.identifier.doi10.1007/s10854-009-9891-6
dc.identifier.eissn
dc.identifier.endpage191
dc.identifier.issn0957-4522
dc.identifier.issue2
dc.identifier.startpage185
dc.identifier.urihttps://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:000273753300014&DestLinkType=FullRecord&DestApp=WOS
dc.identifier.urihttps://hdl.handle.net/20.500.12597/8843
dc.identifier.volume21
dc.identifier.wosWOS:000273753300014
dc.relation.ispartofJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
dc.titleStructural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction
dc.typeArticle
dspace.entity.typeWos
relation.isPublicationOfWosad82491f-e040-4064-9422-8f89953b5774
relation.isPublicationOfWos.latestForDiscoveryad82491f-e040-4064-9422-8f89953b5774

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