Experimental and Theoretical Study of metal Doped Dielectric Capacitors Composd with M-GO/(h-BN)n/M-GO(M = Be, B): A High Capacitance at Micro-Scale

Abstract

Although, reducing dimensions of dielectric insulation such as thickness of a film, cause increasing capacitance in a dielectric capacitor, but in quantum dimension this effect become inverse due to the tunneling effect often conspire to decrease the capacitance of extremely small microstructures. In other words, the geometric dimension in a capacitor is in a sharp contrast to what is expected from classical electrostatics. By this work we have predicted that a dielectric micro-capacitor made of graphene oxide (GO) and hexagonal boron nitride (h-BN) films can produce superior capacitors. Especially doped metals in the graphene oxide such as Be-GO and B-GO can increase the capacity, extremely. Our work was accomplished based on two approaches including, 1-by dielectric-capacitor that was done experimentally in micro scale and second via quantum theory in angstrom dimensions, which was simulated, theoretically. We found in both approaches a combination of metal-GO electrodes with h-BN as insulator can enhance the capacitance, amazingly.