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Frequency dependent C-V and G/omega-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes

dc.contributor.authorTan, SO
dc.contributor.authorTecimer, HU
dc.contributor.authorCicek, O
dc.contributor.authorTecimer, H
dc.contributor.authorAltindal, S
dc.date.accessioned2023-04-15T22:53:19Z
dc.date.available2023-04-15T22:53:19Z
dc.date.issued2017.01.01
dc.identifier.doi10.1007/s10854-016-6147-0
dc.identifier.eissn1573-482X
dc.identifier.endpage4957
dc.identifier.issn0957-4522
dc.identifier.issue6
dc.identifier.startpage4951
dc.identifier.urihttps://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:000395072700057&DestLinkType=FullRecord&DestApp=WOS
dc.identifier.urihttps://hdl.handle.net/20.500.12597/9594
dc.identifier.volume28
dc.identifier.wosWOS:000395072700057
dc.relation.ispartofJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
dc.titleFrequency dependent C-V and G/omega-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes
dc.typeArticle
dspace.entity.typeWos
relation.isPublicationOfWosb938575f-795f-446b-9261-ddf9b4007085
relation.isPublicationOfWos.latestForDiscoveryb938575f-795f-446b-9261-ddf9b4007085

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