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The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes

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dc.contributor.authorFiat, S
dc.contributor.authorPolat, I
dc.contributor.authorBacaksiz, E
dc.contributor.authorKompitsas, M
dc.contributor.authorCankaya, G
dc.date.accessioned2023-04-15T22:15:26Z
dc.date.available2023-04-15T22:15:26Z
dc.date.issued2013.01.01
dc.identifier.doi10.1016/j.cap.2013.03.006
dc.identifier.eissn1878-1675
dc.identifier.endpage1118
dc.identifier.issn1567-1739
dc.identifier.issue6
dc.identifier.startpage1112
dc.identifier.urihttps://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:000318568800030&DestLinkType=FullRecord&DestApp=WOS
dc.identifier.urihttps://hdl.handle.net/20.500.12597/9077
dc.identifier.volume13
dc.identifier.wosWOS:000318568800030
dc.relation.ispartofCURRENT APPLIED PHYSICS
dc.titleThe influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes
dc.typeArticle
dspace.entity.typeWos
local.indexed.atWOS
relation.isPublicationOfWos2c81876a-d8be-4dda-ad75-d2a6ce969f02
relation.isPublicationOfWos.latestForDiscovery2c81876a-d8be-4dda-ad75-d2a6ce969f02

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