21.2 mV/K High-Performance Ni<inf>(50 nm)</inf>-Au<inf>(100 nm)</inf>/Ga<inf>2</inf>O<inf>3</inf>/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode

Abstract

Sensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the {S} values of the Ni50nm - Au100nm /Ga2O3/ p -Si vertical MOS type diode, using the measured capacitance-voltage (Cm - V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.