Possibility of the application of Si5O10–Ge5O10 for increasing H-adsorption towards the energy storage in transistors rather than Li-ion batteries

Abstract

A comprehensive investigation on hydrogen grabbing via Si5O10–Ge5O10 was carried out including using density functional theory computations. The data showed that when silicon was replaced with germanium, the hydrogen-grabbing energy was ameliorated. The electromagnetic and thermodynamic properties of Si5O10–Ge5O10 and Li2(Si 5O 10–Ge5O 10) nanoclusters were evaluated. The fluctuation in charge density values demonstrated that electronic densities were mainly located in the boundary of adsorbate/adsorbent atoms during adsorption. Therefore, it can be concluded that the Si5O10–Ge5O10 nanocluster might be an appropriate candidate for hydrogen storage in transistors. Lithium has an advantage over Si/Ge for possessing higher electron-and-hole motion, which allows lithium instruments to operate at higher frequencies than Si/Ge instruments.