Scopus:
A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors

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dc.contributor.authorCicek O.
dc.contributor.authorBadali Y.
dc.date.accessioned2024-07-08T05:44:31Z
dc.date.available2024-07-08T05:44:31Z
dc.date.issued2024-06-01
dc.identifier10.1109/TDMR.2024.3379745
dc.identifier.doi10.1109/TDMR.2024.3379745
dc.identifier.issn15304388
dc.identifier.scopus2-s2.0-85188669790
dc.identifier.urihttps://hdl.handle.net/20.500.12597/33371
dc.relation.ispartofIEEE Transactions on Device and Materials Reliability
dc.relation.ispartofseriesIEEE Transactions on Device and Materials Reliability
dc.rightsfalse
dc.subjectbreakdown voltage enhancement | field-plated structure | GaN | HEMTs | negative-bias temperature instability | passivation layer | wide-bandgap
dc.titleA Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors
dc.typeJournal
dspace.entity.typeScopus
oaire.citation.issue2
oaire.citation.volume24
person.affiliation.nameKastamonu University
person.affiliation.nameIstanbul Ticaret Üniversitesi
person.identifier.orcid0000-0002-2765-4165
person.identifier.orcid0000-0001-7723-4188
person.identifier.scopus-author-id56460086900
person.identifier.scopus-author-id57194456802

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