Scopus:
High Dielectric Performance of Heterojunction Structures Based on Spin-Coated Graphene-PVP Thin Film on Silicon with Gold Contacts for Organic Electronics

dc.contributor.authorCicek O.
dc.contributor.authorKoca G.
dc.contributor.authorAltindal S.
dc.date.accessioned2023-04-11T22:45:15Z
dc.date.accessioned2023-04-12T00:30:30Z
dc.date.available2023-04-11T22:45:15Z
dc.date.available2023-04-12T00:30:30Z
dc.date.issued2022-01-01
dc.description.abstractThe letter reports that frequency response of heterojunction structure based on a spin-coated graphene-PVP thin film on silicon with gold Schottky contacts and the electronic properties obtained by using capacitance (C) and conductance (Gω) versus voltage characteristics in the frequency range from 5 to 5 MHz. Furthermore, the electronic magnitudes were calculated. The accumulation capacitance observed at 3 V changes from 920 to 1094 pF. Here, empirically, the C and G/ω values increased with a decreasing frequency, while increasing in depletion and accumulation regions with increasing voltages. However, particularly, the Rs - V - f curves have peaks in low frequency values in the accumulation and depletion regions, these peaks decreased at high frequencies. Besides, an interface trap state density of 5.6- 6.58×10 12 cm-2.eV-1 with a relaxation time constant of 157- 31.5 μ s was deduced. Additionally, the frequency and dc bias voltage-dependent dielectric characteristics show a huge dispersion, at room temperature. Experimentally, the high dielectric constant (max) is 111 which is very higher than the maximum value of the conventional materials (SiO2 (3.8), SnO2 (7.5), and so on) and appropriate doped materials to PVP. The results indicate that the graphene-PVP thin film with the high max value has a potential in metal-organic-semiconductors device technologies instead of a conventional device.
dc.identifier.doi10.1109/TED.2021.3129722
dc.identifier.issn189383
dc.identifier.scopus2-s2.0-85120550246
dc.identifier.urihttps://hdl.handle.net/20.500.12597/4141
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.rightsfalse
dc.subjectC/G-V-f characteristics | Electric and dielectric properties | Graphene-PVP thin film | Metal-organic-semiconductor
dc.titleHigh Dielectric Performance of Heterojunction Structures Based on Spin-Coated Graphene-PVP Thin Film on Silicon with Gold Contacts for Organic Electronics
dc.typeArticle
dspace.entity.typeScopus
oaire.citation.issue1
oaire.citation.volume69
person.affiliation.nameKastamonu University
person.affiliation.nameKastamonu University
person.affiliation.nameGazi Üniversitesi
person.identifier.orcid0000-0002-2765-4165
person.identifier.scopus-author-id56460086900
person.identifier.scopus-author-id57362064100
person.identifier.scopus-author-id9336280900
relation.isPublicationOfScopus4e9204af-99eb-4693-8d18-f329a97de1db
relation.isPublicationOfScopus.latestForDiscovery4e9204af-99eb-4693-8d18-f329a97de1db

Files