Vertical CdTe:PVP/p-Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact

Abstract

IEEEThe vertical Schottky barrier diode (SBD)-based temperature sensors with the drive modes is a significant issue with more advantageous than the on-chip sensor. The sensitivity (<italic>S</italic>) and the current conduction mechanisms (CCMs) of the vertical CdTe:PVP/<italic>p</italic>-Si SBD were studied experimentally over the range of 80&#x2013;340 K and compared with that of the lateral and vertical sensors. It is shown that the low and moderated voltages of CdTe:PVP/<italic>p</italic>-Si corresponding two linear-regions of the current-voltage (I-V) outputs are around 0.1 - 0.3V and 0.4 - 0.65V, respectively. The variation of Schottky barrier height (&#x03A6;_{<italic>Bo</italic>}) and ideality factor (<italic>n</italic>) with temperature was obtained according to two linear-regions. Energy dispersion of the interface-traps (<italic>N_ss</italic>) with changing temperature is additionally analyzed quantitatively. It is concluded that the thermionic-emission (TE) theory with Double-Gaussian distribution are the dominant mechanism resulting the I-V characteristics of the vertical CdTe:PVP/<italic>p</italic>-Si SBD in this study. Moreover, in constant current, the <italic>S</italic> values at the drive current of 10&#x03BC;A, 20&#x03BC;A and 50&#x03BC;A were resulting in a range of -1.6 to -1.8 mV/K.