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The influence of Gd addition on microstructure and transport properties of Bi-2223

dc.contributor.authorTerzioglu, C.
dc.contributor.authorAydin, H.
dc.contributor.authorOzturk, O.
dc.contributor.authorBekiroglu, E.
dc.contributor.authorBelenli, I.
dc.date.accessioned2026-01-02T13:22:28Z
dc.date.issued2008-10-01
dc.description.abstractAbstract We have investigated the effect of addition of Gd in Bi 1.8 Pb 0.35 Sr 1.9 Ca 2.1 Cu 3 Gd x O y superconductor with x =0, 0.1, 0.2, 0.3, 0.4 and 0.5. The samples were prepared by standard solid-state reaction methods. The investigation consisted of X-ray diffraction (XRD), scanning electron microscopy (SEM), dc electrical resistivity, hole concentration and transport critical current density measurements. Transport measurements indicated that the superconducting transition temperature, transport critical current density and hole concentration values of the samples strongly depend on the Gd addition. The values of T c , and J c of the samples decreased with the increase in Gd addition. When Gd addition ratio was increased, surface morphology and grain connectivity of the samples were observed to degrade from SEM investigations and phase ratio of the high- T c (Bi-2223) phase to the low- T c (Bi-2212) phase decreased (XRD measurements). The possible reasons for the observed degradation in superconducting and microstructure properties of Bi-2223 due to Gd addition were discussed.
dc.description.urihttps://doi.org/10.1016/j.physb.2008.04.033
dc.description.urihttps://dx.doi.org/10.1016/j.physb.2008.04.033
dc.description.urihttps://hdl.handle.net/20.500.12491/6219
dc.description.urihttps://aperta.ulakbim.gov.tr/record/40789
dc.identifier.doi10.1016/j.physb.2008.04.033
dc.identifier.endpage3359
dc.identifier.issn0921-4526
dc.identifier.openairedoi_dedup___::3f8a34c14779dbba4ec65fbff8f5d33a
dc.identifier.orcid0000-0002-0391-5551
dc.identifier.scopus2-s2.0-55349117808
dc.identifier.startpage3354
dc.identifier.urihttps://hdl.handle.net/20.500.12597/35439
dc.identifier.volume403
dc.identifier.wos000259894100003
dc.language.isoeng
dc.publisherElsevier BV
dc.relation.ispartofPhysica B: Condensed Matter
dc.rightsOPEN
dc.subjectGd addition
dc.subjectXRD
dc.subjectElectrical Properties
dc.subjectHole Concentration
dc.subjectSEM
dc.subjectTransition Temperature
dc.titleThe influence of Gd addition on microstructure and transport properties of Bi-2223
dc.typeArticle
dspace.entity.typePublication
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The samples were prepared by standard solid-state reaction methods. The investigation consisted of X-ray diffraction (XRD), scanning electron microscopy (SEM), dc electrical resistivity, hole concentration and transport critical current density measurements. Transport measurements indicated that the superconducting transition temperature, transport critical current density and hole concentration values of the samples strongly depend on the Gd addition. The values of T c , and J c of the samples decreased with the increase in Gd addition. When Gd addition ratio was increased, surface morphology and grain connectivity of the samples were observed to degrade from SEM investigations and phase ratio of the high- T c (Bi-2223) phase to the low- T c (Bi-2212) phase decreased (XRD measurements). 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