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Temperature and tellurium (Te) dependence of electrical characterization and surface properties for a chalcopyrite structured schottky barrier diode

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dc.contributor.authorFiat S.
dc.contributor.authorBacaksiz E.
dc.contributor.authorKompitsas M.
dc.contributor.authorÇankaya G.
dc.date.accessioned2026-01-02T23:06:54Z
dc.date.issued2014-02-01
dc.description.abstractAbstract Al/p-CuIn0.7Ga0.3(Se(1−x)Tex)2/Mo Schottky barrier diodes (SBD) have been investigated as electrical and morphological. Electrical characterization and surface maps of the prepared CuIn0.7Ga0.3(Se(1−x)Tex)2 (briefly, CIGSeTe) compounds with two different compositions for x = 0.0 and 0.6 were examined in 150–300 K range. CIGSeTe films were grown on Mo back contact. Some electrical parameters such as, ideality factors, n; zero-bias barrier heights, Φbo and Richardson constants were calculated from the current–voltage (I–V) measurements and plotted as a function of temperature. These results verify that electrical properties of these two diodes can be defined on the basis of the Thermionic emission (TE) theory with the Gaussian distribution (GD) of the Schottky barrier height (SBH) being related to inhomogeneities at the metal/semiconductor (MS) interface. On the other hand, we saw a better morphology in Te rich samples. Rms (root mean square) values increased from 8.50 nm to 9.80 nm with higher pellets on surface with Te.
dc.description.urihttps://doi.org/10.1016/j.jallcom.2013.09.123
dc.description.urihttps://dx.doi.org/10.1016/j.jallcom.2013.09.123
dc.description.urihttps://hdl.handle.net/10442/17201
dc.description.urihttps://avesis.aybu.edu.tr/publication/details/2707bf25-d2a6-4c1f-b464-655e5cb0c13d/oai
dc.description.urihttps://hdl.handle.net/20.500.12438/4817
dc.identifier.doi10.1016/j.jallcom.2013.09.123
dc.identifier.endpage184
dc.identifier.issn0925-8388
dc.identifier.openairedoi_dedup___::3b3156cd4126533243ee4a01b130c8a1
dc.identifier.orcid0000-0003-2932-1695
dc.identifier.scopus2-s2.0-84885463306
dc.identifier.startpage178
dc.identifier.urihttps://hdl.handle.net/20.500.12597/35794
dc.identifier.volume585
dc.identifier.wos000327492600027
dc.language.isoeng
dc.publisherElsevier BV
dc.relation.ispartofJournal of Alloys and Compounds
dc.rightsCLOSED
dc.subjectPhysical and theoretical chemistry
dc.subjectElectrical properties
dc.subjectSchottky barrier diodes
dc.subjectΦυσική και θεωρητική χημεία
dc.subjectAFM
dc.subjectCIGSeTe
dc.titleTemperature and tellurium (Te) dependence of electrical characterization and surface properties for a chalcopyrite structured schottky barrier diode
dc.typeArticle
dspace.entity.typePublication
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