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21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode

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dc.contributor.authorCicek, Osman
dc.contributor.authorArslan, Engin
dc.contributor.authorAltindal, Semsettin
dc.contributor.authorBadali, Yosef
dc.contributor.authorOzbay, Ekmel
dc.date.accessioned2026-01-04T17:33:41Z
dc.date.issued2022-12-15
dc.description.abstractIEEESensitivity (<italic>S</italic>) and drive mode are the crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni<sub>(50nm)</sub>-Au<sub>(100nm)</sub>/Ga<sub>2</sub>O<sub>3</sub>/<italic>p</italic>-Si vertical MOS type diode, using the measured capacitance-voltage (<italic>C<sub>m</sub></italic>-<italic>V</italic>) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2mV/K at 1nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near the room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.
dc.description.urihttps://doi.org/10.1109/jsen.2022.3219553
dc.description.urihttps://avesis.gazi.edu.tr/publication/details/4d8fe11b-74d7-4acd-817b-97856b47830f/oai
dc.description.urihttps://hdl.handle.net/11693/111906
dc.description.urihttp://hdl.handle.net/11467/6153
dc.description.urihttp://hdl.handle.net/11467/6257
dc.description.urihttps://doi.org/https://doi.org/10.1109/JSEN.2022.3219553
dc.identifier.doi10.1109/jsen.2022.3219553
dc.identifier.eissn2379-9153
dc.identifier.endpage23704
dc.identifier.issn1530-437X
dc.identifier.openairedoi_dedup___::bb7c3f11eb4c29e36951a21338201b40
dc.identifier.orcid0000-0002-2765-4165
dc.identifier.orcid0000-0001-7723-4188
dc.identifier.orcid0000-0003-2953-1828
dc.identifier.scopus2-s2.0-85141580928
dc.identifier.startpage23699
dc.identifier.urihttps://hdl.handle.net/20.500.12597/40205
dc.identifier.volume22
dc.identifier.wos000928140300009
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartofIEEE Sensors Journal
dc.rightsOPEN
dc.subjectVertical metal-oxide-semiconductor (MOS) type diode
dc.subjectSensitivity
dc.subjectNovel drive mode
dc.subjectNovel drive mode, sensitivity, temperature sensing, vertical metal-oxide-semiconductor (MOS) type diode.
dc.subjectTemperature sensing
dc.subject.sdg7. Clean energy
dc.title21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode
dc.typeArticle
dspace.entity.typePublication
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