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A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors

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dc.contributor.authorÇiçek, Osman
dc.contributor.authorBadali, Yosef
dc.date.accessioned2026-01-04T20:28:36Z
dc.date.issued2024-06-01
dc.description.urihttps://doi.org/10.1109/tdmr.2024.3379745
dc.identifier.doi10.1109/tdmr.2024.3379745
dc.identifier.eissn1558-2574
dc.identifier.endpage286
dc.identifier.issn1530-4388
dc.identifier.openairedoi_________::f3640fecaa33fac6dcfb52d7544182a7
dc.identifier.orcid0000-0002-2765-4165
dc.identifier.orcid0000-0001-7723-4188
dc.identifier.scopus2-s2.0-85188669790
dc.identifier.startpage275
dc.identifier.urihttps://hdl.handle.net/20.500.12597/41829
dc.identifier.volume24
dc.identifier.wos001253145400015
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartofIEEE Transactions on Device and Materials Reliability
dc.rightsCLOSED
dc.titleA Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors
dc.typeArticle
dspace.entity.typePublication
local.import.sourceOpenAire
local.indexed.atWOS
local.indexed.atScopus

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