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Comparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si heterojunctions

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dc.contributor.authorAlarabi, Ahmed Ali
dc.contributor.authorÇiçek, Osman
dc.contributor.authorMakara, Hasan
dc.contributor.authorÜnal, Fatih
dc.contributor.authorZurnacı, Merve
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2026-01-04T20:23:14Z
dc.date.issued2024-05-01
dc.description.abstractAbstractIn this paper, we present a comprehensive comparison study between p-n and p-i-n vertical diodes employing diverse heterojunction configurations under dark conditions. The diodes are fabricated utilizing p-PMItz as the organic semiconductor layer interfacing with different inorganic substrates, including n-Si (n-type silicon), n-4HSiC (n-type 4H silicon carbide), and incorporating an intrinsic SiO2 (silicon dioxide) layer in the p-PMItz/i-SiO2/n++-Si configuration. The current–voltage and dielectric characteristics are analyzed to discern the performance discrepancies among these diode configurations. The influence of heterojunction interfaces and band alignments on device behavior is investigated, shedding light on the charge transport mechanisms within these structures. Our findings reveal distinct trends in device characteristics for p-n and p-i-n diodes, highlighting the significance of heterojunction design in optimizing device performance. This comparative analysis offers valuable insights for the development of efficient organic–inorganic hybrid diodes tailored for various optoelectronic applications.
dc.description.urihttps://doi.org/10.1007/s10854-024-12707-0
dc.identifier.doi10.1007/s10854-024-12707-0
dc.identifier.eissn1573-482X
dc.identifier.issn0957-4522
dc.identifier.openairedoi_________::45da29a2277740dd325263dd28de3601
dc.identifier.orcid0000-0003-3553-3379
dc.identifier.scopus2-s2.0-85192806395
dc.identifier.urihttps://hdl.handle.net/20.500.12597/41768
dc.identifier.volume35
dc.identifier.wos001221750300007
dc.language.isoeng
dc.publisherSpringer Science and Business Media LLC
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.rightsOPEN
dc.titleComparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si heterojunctions
dc.typeArticle
dspace.entity.typePublication
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