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DETERMINATION OF THE ELECTRONIC ENERGY LEVELS OF A QUANTUM WELL HETEROSTRUTURE Zn(1-x) MgxO/ZnO/Zn1-xMgxO.

dc.date.accessioned2026-01-05T22:31:12Z
dc.date.issued2020-01-01
dc.description.abstractThis paper studies a quantum well heterostructure made up by a zinc oxide (ZnO) thin layer (well) sandwiched between two Zn1-xMgxO layers acting as potential barriers. Setting the width of the well to a = 10 nm, the allowed quantum states in the conduction band (CB) and the wave function profiles are examined for two values of magnesium concentration : x = 0.1 and x = 0.2. The calculated wavelengths corresponding to intra-band transitions in the conduction band are in the infrared domain of the electromagnetic spectrum. These wavelengths depend on x, allowing to control the optoelectronic properties of the quantum well by adjusting the concentration x during the growth process.
dc.description.urihttps://doi.org/10.29121/ijesrt.v9.i12.2020.10
dc.identifier.doi10.29121/ijesrt.v9.i12.2020.10
dc.identifier.eissn2277-9655
dc.identifier.endpage89
dc.identifier.openairedoi_________::5d8389d3aaff3eaaaf2c7981febcfb89
dc.identifier.startpage84
dc.identifier.urihttps://hdl.handle.net/20.500.12597/43184
dc.identifier.volume9
dc.language.isoeng
dc.publisherInfluential Scholarly Research Publication
dc.relation.ispartofInternational Journal of Engineering Sciences & Research Technology
dc.rightsOPEN
dc.titleDETERMINATION OF THE ELECTRONIC ENERGY LEVELS OF A QUANTUM WELL HETEROSTRUTURE Zn(1-x) MgxO/ZnO/Zn1-xMgxO.
dc.typeArticle
dspace.entity.typePublication
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