Sarikavak B.Öztürk M.K.Altuntaş H.Mammedov T.S.Altindal S.Özçelik S.2023-04-122023-04-122008-01-010035001Xhttps://hdl.handle.net/20.500.12597/6268A qualified In0:15Ga0:85As/GaAs superlattice was grown on an n-type GaAs(100) substrate by molecular beam epitaxy(MBE). Analysis of this structure was first carried out by X-Ray diffraction(XRD) and this structure's the interface thicknesses, roughness and x concentration determined at nanoscale. Secondly, the electrical characteristics of this sample such as the current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T) and conductance-voltage temperature (G-V-T) were studied over a wide temperature range. The energy distribution of interface states was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. Experimental results show that the forward and reverse I-V characteristics are similar to Schottky-junction behavior. The ideality factor n, series resistance Rs, barrier height φ{symbol} B and density of interface states Nss were found to be strong functions of temperature. According to thermionic emission (TE) theory, the zero-bias barrier height (φ{symbol}Bo) calculated from forward bias I-V characteristics was found to increases with increasing temperature. In addition, the value of Rs as a function of both voltage and temperature was obtained from C-V and G-V characteristics. The temperature dependent of I-V, C-V and G-V characteristics confirmed that the distribution the Rs and Nss are important parameters that influence the electrical characteristics of these devices.falseInterface states | MBE | Series resistance | Temperature dependent | X-Ray diffractionArticle2-s2.0-68949214617