Cicek O., Arslan E., Altindal S., Badali Y., Ozbay E.Cicek, O, Arslan, E, Altindal, S, Badali, Y, Ozbay, E2023-05-092023-05-092022-12-152022.01.011530-437Xhttps://hdl.handle.net/20.500.12597/13355Sensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the {S} values of the Ni50nm - Au100nm /Ga2O3/ p -Si vertical MOS type diode, using the measured capacitance-voltage (Cm - V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.falseNovel drive mode | sensitivity | temperature sensing | vertical metal-oxide-semiconductor (MOS) type diodeArticle10.1109/JSEN.2022.321955310.1109/JSEN.2022.32195532-s2.0-85141580928WOS:0009281403000092369923704221558-1748