Ongun, E.Utas, S.Yücel, H.H.Hançerliogullari, A.2024-07-302024-07-302024.01.011302-0900https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:001269940900001&DestLinkType=FullRecord&DestApp=WOS_CPLhttps://hdl.handle.net/20.500.12597/33459Several studies have been reported on the theoretical and experimental investigation of gas discharge-semiconductor microplasma systems (GDS mu PS). In this study, a two-dimensional fluid model of a micro plasma in a square direct current (DC) glow-discharge chamber is simulated using the finite-element method (FEM) solver COMSOL Multiphysics program based on mixture-averaged diffusion-drift theory of gas discharges and Maxwellian electron energy distribution function. A unique III-antimonide high-Ohmic semi-insulating aluminum gallium antimonide (AlGaSb) with finely digitated electron emission surface is modeled as planar cathode electrode coupled to ITO/SiO 2 planar anode electrode across a gas discharge gap of 100 mu m distance. Argon (Ar) and argon mixed with a molar fraction of 5% hydrogen (Ar/H 2 ) gas media are seperately introduced to the micro gap at sub-atmospheric pressure of 150 Torr, and the cell is driven at 1.0 kV DC by a stationary power source to simulate the transitions from electron field emission state to self-sustained normal glow discharge state. The model is simulated to exhibit the transient physical characteristics of the AlGaSb-Ar/H 2 glow-discharge micro plasma system by solving the spatiotemporal dynamics of various discharge parameters including, electron density, electron energy density, electron current density and electric potential. It has been observed that a fraction of hydrogen addition to argon can be used as an effective tool in modeling application-specific hybrid micro plasma - semiconductor based infrared photodetector devices.eninfo:eu-repo/semantics/openAccessMicroplasmaAlGaSbDC plasma simulationinfrared photodetectorArticle10.2339/politeknik.14060360012699409000012147-9429