A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors

Çiçek, OBadali, Y2024-07-082024-07-082024.01.011530-4388https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:001253145400015&DestLinkType=FullRecord&DestApp=WOS_CPLhttps://hdl.handle.net/20.500.12597/33367HEMTsElectric breakdownLogic gatesPassivationTransistorsElectric fieldsIII-V semiconductor materialsGaNwide-bandgapnegative-bias temperature instabilityfield-plated structurepassivation layerbreakdown voltage enhancementA Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility TransistorsArticle10.1109/TDMR.2024.33797450012531454000152752862421558-2574