Improving the Electronic Properties of Au/n-Si Type Schottky Junction Structure With Graphene-PVP Nano-Thin Film by Using the I-V, C-2-V and G/omega-V Characteristics

Cicek, O2023-04-182023-04-182020.01.011536-125Xhttps://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:000526715100002&DestLinkType=FullRecord&DestApp=WOShttps://hdl.handle.net/20.500.12597/10441Improving the Electronic Properties of Au/n-Si Type Schottky Junction Structure With Graphene-PVP Nano-Thin Film by Using the I-V, C-2-V and G/omega-V CharacteristicsArticle10.1109/TNANO.2020.2972036WOS:000526715100002172178191941-0085