A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors

Cicek O.Badali Y.2024-07-082024-07-082024-06-0115304388https://hdl.handle.net/20.500.12597/33371falsebreakdown voltage enhancement | field-plated structure | GaN | HEMTs | negative-bias temperature instability | passivation layer | wide-bandgapA Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility TransistorsJournal10.1109/TDMR.2024.33797452-s2.0-85188669790