Unal, F.Aktas, S.Kurt, M.S.Koc, M.M.Coskun, B.Aslan, N.Arslan, T.Gur, M.2024-10-182024-10-182024.01.010921-4526https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=dspace_ku&SrcAuth=WosAPI&KeyUT=WOS:001329655300001&DestLinkType=FullRecord&DestApp=WOS_CPLhttps://hdl.handle.net/20.500.12597/33655The fabrication and characterization of high-performance devices for optoelectronic applications, particularly their response to incident light, are crucial. In this study, a MnPc/DLC device was fabricated using thermal evaporation and magnetron sputtering techniques, and its fundamental optoelectronic properties were characterised. Key diode parameters including barrier height, ideality factor, reverse saturation current, series resistance, and shunt resistance were determined using several methods, such as TE, Ohm's Law, the modified Norde method, and the Mikhelashvili method. The results from these methods were found to be consistent with varying light intensities. Additionally, photodetector parameters of the MnPc/DLC device were measured at +/- 1 V under light intensities of 20, 40, 60, 80, and 100 mW/cm(2), and the findings were compared with the literature. The maximum values for photocurrent, photoresponsivity, photosensitivity, specific detectivity, and on/off ratio were 6.41 x 10(-2) A, 2.49 A/W, 2.02 x 10(5), 5.8 x 10(9) Jones and 2.06 x 10(3), respectively. Notably, the photocurrent, photoresponsivity, photosensitivity, and on/off ratio values were found to be significantly higher and more promising compared to those reported in the literature.eninfo:eu-repo/semantics/openAccessHybrid photodetectorOrganic electronicsMnPcDLCCarbon-based deviceHigh photodetector parametersArticle10.1016/j.physb.2024.4165840013296553000016951873-2135